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     2003 Dec 12 5 NXP Semiconductors Product data sheet Low-leakage diode BAS116 102 150 200 Tj ( °C) 50 0 mlb754 100 10 1 10?1 10?2 10?3 IR (nA) (1) (2) (1) Maximum values. (2) Typical values. VR = 75 V. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. 2handbook, halfpage 0 010205 15 VR (V) 1 MBG526 Cd (pF) handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90% VR input signal V = V I x RRF S R = 50S ? IF D.U.T. R = 50i ? SAMPLING OSCILLOSCOPE MGA881 Fig.7 Reverse recovery time test circuit and waveforms. (1) IR = 1 mA. |